v rrm = 20 v - 40 v i f(av) = 300 a features ? high surge capability twin tower package ? not esd sensitive parameter symbol MBR30020CT(r) mbr30030ct(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v ? types from 20 v to 40 v v rrm conditions 40 28 MBR30020CT thru mbr30040ctr mbr30040ct(r) 35 25 mbr30035ct(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode dc blocking voltage v dc 20 30 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol MBR30020CT(r) mbr30030ct(r) unit a verage forward current (per pkg) i f(av) 300 300 a maximum forward voltage (per leg) 0.70 0.70 11 10 10 50 50 thermal characteristics thermal resistance, junction-case, per leg r jc 0.40 0.40 c/w t j = 100 c 10 10 t c = 125 c 300 300 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 2000 2000 2000 2000 v -55 to 150 -55 to 150 40 35 a -55 to 150 mbr30040ct(r) 11 mbr30035ct(r) 0.40 t j = 150 c 0.40 0.70 0.70 50 ma t j = 25 c i fm = 150 a, t j = 25 c conditions -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified reverse current at rated dc blocking voltage (per leg) i r v f 50 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
MBR30020CT thru mbr30040ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. MBR30020CT thru mbr30040ctr www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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